Sacrificial Oxide Etching Compatible with Aluminium Metallization

Autor:	P.J. French, P.T.J. Gennissen
Rok vydání:	1998
Předmět:	Materials science Silicon fungi Metallurgy technology industry and agriculture Oxide chemistry.chemical_element macromolecular substances Surface micromachining chemistry.chemical_compound stomatognathic system chemistry Resist Etching (microfabrication) Aluminium Dry etching Layer (electronics)
Zdroj:	Sensor Technology in the Netherlands: State of the Art ISBN: 9789401061032
DOI:	10.1007/978-94-011-5010-1_31
Popis:	This paper reports on sacrificial oxide etching with very high selectivity to aluminum metallization using mixtures of 73% HF and IPA. Etch rate ratios up to 680 have been achieved even for (slow etching) thermal oxide. Thermal oxide etch rates up to 1.8 /spl mu/m/min. are reported. Thick polysilicon accelerometers with aluminum metallization and thermal sacrificial oxide have been made as well as full aluminum microstructures using plasma oxide as sacrificial layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d1043a828a3a4f490f2db27a628aa1ec https://doi.org/10.1007/978-94-011-5010-1_31 Zobrazit plný text záznamu