Study of amorphous tin oxide thin films for ISFET applications
| Autor: | Hung-Kwei Liao, Shen-Kan Hsiung, Tai-Ping Sun, Wen-Yaw Chung, Jung-Chuan Chou |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Metals and Alloys Analytical chemistry Response time Condensed Matter Physics Tin oxide Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Amorphous solid Hysteresis Materials Chemistry Electrical and Electronic Engineering Thin film ISFET Instrumentation Diode |
| Zdroj: | Sensors and Actuators B: Chemical. 50:104-109 |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/s0925-4005(98)00162-2 |
| Popis: | In this study, an amorphous tin oxide (SnO 2 ) obtained by thermal evaporation was used as a pH-sensitive material for pH-ISFETs. Capacitance–voltage (C–V) curves of the EIS diode were used to evaluate pH response of SnO 2 thin film. Subsequently, SnO 2 /SiO 2 gate ISFET was fabricated and pH sensitivity was determined through a shift in the threshold voltage of an ISFET sensor. The experimental data show that the SnO 2 /SiO 2 gate ISFET sensors have a linear pH response of about 58 mV pH −1 in a concentration range between pH 2 and pH 10. In addition, the other characteristics of this sensor, such as temperature effect, drift effect, hysteresis and response time were also investigated in this paper. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect