The features of X-ray topographic contrast formation in silicon with dislocation clusters
| Autor: | D. Fedortsov, I. V. Yaremchuk, A. Ya. Struk, S. N. Novikov, I. M. Fodchuk |
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| Rok vydání: | 2013 |
| Předmět: |
Dislocation creep
Diffraction Physics Total internal reflection Silicon Condensed matter physics chemistry.chemical_element General Chemistry Condensed Matter Physics Crystallographic defect Condensed Matter::Materials Science Glide plane chemistry General Materials Science Dislocation Burgers vector |
| Zdroj: | Crystallography Reports. 58:976-983 |
| ISSN: | 1562-689X 1063-7745 |
| Popis: | The features of formation of diffraction images of edge dislocation sets forming clusters (of two, three and more dislocations) as well as small-angle dislocation boundaries (walls) have been studied. A variety of diffraction effects of wave fields created in strongly distorted crystals regions along dislocation lines have been observed. Various intensity interference effects of rescattering and internal reflection of the newly formed and already existing wave fields on thickness distributions of intensity for the case of presence in the same glide plane of edge dislocations with parallel and anti-parallel Burgers vectors were discovered. |
| Databáze: | OpenAIRE |
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