Repairing the surface of InAs-based topological heterostructures
| Autor: | Michael J. Manfra, A. Jouan, T. Wang, S. J. Pauka, B. Harlech-Jones, David J. Reilly, Jan Gukelberger, C. N. Allen, John King Gamble, J. D. S. Witt, Sergei Gronin, Geoffrey C. Gardner, Maja C. Cassidy, Candice Thomas |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Superconductivity Materials science Condensed matter physics Passivation Scattering General Physics and Astronomy Heterojunction 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Qubit 0103 physical sciences Proximity effect (audio) 0210 nano-technology Quantum well |
| Zdroj: | Journal of Applied Physics. 128:114301 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin–orbit interaction and superconductivity via the proximity effect. For InAs- or InSb-based materials, the need to form shallow quantum wells to create a hard-gapped p-wave superconducting state often subjects them to fabrication-induced damage, limiting their mobility. Here, we examine scattering mechanisms in processed InAs 2DEG quantum wells and demonstrate a means of increasing their mobility via repairing the semiconductor–dielectric interface. Passivation of charged impurity states with an argon–hydrogen plasma results in a significant increase in the measured mobility and reduction in its variance relative to untreated samples, up to 45 300 cm 2/(V s) in a 10 nm deep quantum well. |
| Databáze: | OpenAIRE |
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