Obtainment of textured films of aluminum nitride by thermochemical nitridation of sapphire

Autor:	Kh. Sh-o. Kaltaev, N. S. Sidelnikova, M. A. Rom, M. V. Dobrotvorskaya, S. V. Nizhankovskiy, A. Y. Dan’ko, Pavel V. Mateychenko, A. T. Budnikov
Rok vydání:	2009
Předmět:	Materials science chemistry Aluminium Diffusion Metallurgy Sapphire chemistry.chemical_element Nitrogen atmosphere Nitride Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 43:1606-1609
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782609120069
Popis:	The possibility of obtaining textured aluminum nitride films by thermochemical nitridation of sapphire in the temperature range of 1200–1500°C in nitrogen atmosphere with the CO content from 0.1 to 5 vol % is shown. The diffusion mechanism of formation of the aluminum nitride film on the sapphire surface under the effect of the reducing medium is established.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0de6b755de38daeeac744de3aedf15d https://doi.org/10.1134/s1063782609120069 Zobrazit plný text záznamu Plný text ve formátu PDF