Modeling of Radiation Hardness of a CCD with High-Speed Column Parallel Readout
| Autor: | Tuomo Tikkanen, Michal Koziel, Tim Greenshaw, Salim Aoulmit, C. K. Bowdery, Khaled Bekhouche, Konstantin D. Stefanov, Andrei Nomerotski, Chris Damerell, Craig Buttar, Dzmitry Maneuski, S. D. Worm, T. Woolliscroft, Lakhdar Dehimi, Andre Sopczak, Dahmane Djendaoui |
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| Rok vydání: | 2009 |
| Předmět: |
Physics
Nuclear and High Energy Physics Silicon Physics::Instrumentation and Detectors business.industry Astrophysics::Instrumentation and Methods for Astrophysics chemistry.chemical_element Charge (physics) Electron Signal Atomic and Molecular Physics and Optics law.invention Optics chemistry law Electronic engineering Radiation damage Collider business Radiation hardening Voltage |
| Zdroj: | Nuclear Physics B - Proceedings Supplements. 197:349-352 |
| ISSN: | 0920-5632 |
| DOI: | 10.1016/j.nuclphysbps.2009.10.101 |
| Popis: | Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. Radiation hardness is an important aspect in the CCD development. Bulk radiation damage in the silicon leads to electron traps and hence to charge transfer inefficiency (CTI). The effects of the two trap levels 0.17 and 0.44 eV are considered. We have extended our Analytic Model to include the effects of the shape of the signal charge packet and the clock voltage on the CTI determination. The CTI values determined with the Analytic Model largely agree with those from a full TCAD simulation. |
| Databáze: | OpenAIRE |
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