Photo-injection PIN diode switch for high power RF switching

Autor:	C.T. Chang, D.W. Fogliatti, E.W. Jacobs, D.J. Albares, Hugh Nguyen, C.K. Sun
Rok vydání:	2005
Předmět:	Materials science business.industry RF power amplifier PIN diode Electrical engineering Optical power Capacitance law.invention RF switch law Duty cycle Insertion loss business Shunt (electrical)
Zdroj:	2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
DOI:	10.1109/icsict.2001.982133
Popis:	The RF high power switching properties of an optically controlled RF switch, the photo-injection PIN switch (PIPINS), are investigated. Proper functioning of a PIPINS as a low insertion loss RF switch requires that it operates as a photoconductor, where the photo-injected charge is much greater than the RF sweep out charge. Insertion loss using 650 mW optical power was
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0d786f6af79dce603e593fc3280f32b https://doi.org/10.1109/icsict.2001.982133 Zobrazit plný text záznamu