Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

Autor:	Siddarth Sundaresan, Yaroslav Koshka, Albert V. Davydov, Igor Levin, Bharat Krishnan, J. Neil Merrett, Rooban Venkatesh K.G. Thirumalai
Rok vydání:	2011
Předmět:	Materials science business.industry Stacking Nanowire Nanotechnology General Chemistry Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Monocrystalline silicon Perpendicular Optoelectronics General Materials Science Wafer Vapor–liquid–solid method business
Zdroj:	Crystal Growth & Design. 11:538-541
ISSN:	1528-7505 1528-7483
Popis:	SiC nanowires were grown on monocrystalline 4H-SiC wafers by chemical vapor deposition using the vapor-liquid-solidgrowthmode.Thegrowthdirectionofthenanowireswasdictatedbythecrystallographicorientationofthe 4H-SiC substrates. Two distinct types of nanowires were obtained. The first type crystallized in the 3C polytype with the AE111ae nanowire axes. These nanowires grew at 20� with respect to the substratec-planes and exhibited high densities of stacking faults on those {111} planes that are parallel to the substrate c-planes. The second type featured the 4H structure albeit with a strong stacking disorder. The stacking faults in these nanowires were perpendicular to the (0001) nanowire axes. Possible growth mechanisms that led to the formation of 3C and 4H polytypes are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0cccb927dc978cdfb2d08b63caa1c75 https://doi.org/10.1021/cg101405u Zobrazit plný text záznamu