A compact 29% PAE at 6 dB power back-off E-mode GaAs pHEMT MMIC Doherty power amplifier at Ka-band
| Autor: | Binh L. Pham, Duy P. Nguyen, Anh-Vu Pham |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Power-added efficiency
Materials science business.industry Amplifier 020208 electrical & electronic engineering Electrical engineering Adjacent channel power ratio 020206 networking & telecommunications 02 engineering and technology Integrated circuit High-electron-mobility transistor Predistortion law.invention law 0202 electrical engineering electronic engineering information engineering Ka band business Monolithic microwave integrated circuit |
| Zdroj: | 2017 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2017.8058964 |
| Popis: | In this paper, we present a compact Doherty power amplifier (DPA) in a 0.15-μm enhancement mode (E-mode) Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process at Ka-band. The 2-stage DPA uses an integrated input broadside coupler to miniaturize the die size to 2.86 mm2. The monolithic millimeter-wave integrated circuit (MMIC) DPA exhibits a measured output power of 26 dBm and a measured average gain of 12 dB. The gain bandwidth covers from 25.5 to 33 GHz. The measured peak power added efficiency (PAE) is 40% and the PAE at 6 dB output power back-off is 29%. Moreover, an adjacent channel power ratio (ACPR) of −45 dBc has been measured using a 20 MHz digitally modulated signal and digital predistortion (DPD). |
| Databáze: | OpenAIRE |
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