Analysis of Heavy Ion Irradiation Test Results on Power Diodes

Autor:	Xavier Marie, D. Lagarde, A. Varotsou, C. Boatella-Polo, L. Azema, M. Mauguet, E. Le Goulven
Rok vydání:	2018
Předmět:	Materials science Silicon 010308 nuclear & particles physics business.industry Schottky diode chemistry.chemical_element 01 natural sciences Ion chemistry.chemical_compound chemistry Derating 0103 physical sciences Silicon carbide Optoelectronics Irradiation p–n junction business Diode
Zdroj:	2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Popis:	A selection of power diodes with a large range of electrical and structural characteristics was irradiated with heavy ions. The data are analyzed based on 4 main behaviors of the leakage current recorded during irradiation. The types and occurrences of failures are studied considering the material (silicon, silicon carbide) and the structure (Schottky or PN junction) of the diode. The derating schemes for Si, SiC Schottky diode and ultrafast rectifiers are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0ba2902cae650356cccbcbecdea1f19 https://doi.org/10.1109/radecs45761.2018.9328674 Zobrazit plný text záznamu