Bipolar switching characteristics of low-power Geo resistive memory
| Autor: | Chun-Hu Cheng, Tian-Li Wu, Szu-Ling Liu, P. C. Chen, Albert Chin, Hsiao-Hsuan Hsu, F. S. Yeh |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Electrical engineering Dielectric Condensed Matter Physics Thermal conduction Poole–Frenkel effect Electronic Optical and Magnetic Materials Resistive random-access memory Non-volatile memory Low-power electronics Electrode Materials Chemistry Optoelectronics Commutation Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 62:90-93 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2011.04.010 |
| Popis: | We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole–Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect