High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing
| Autor: | Chun-Hu Cheng, Wei Chun Wang, Chien Liu, Tsung Ming Lee, Hsiao-Hsuan Hsu, Szu Yen Hsiung, Hsiu Ming Liu, Zhong Ying Huang, Shih An Wang, Yu Chi Fan, Sheng Lee, Wu-Ching Chou, Bing Yang Shih, Zi You Huang, Yi Chun Tung, Hsuan Han Chen, Chien Liang Lin |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Passivation business.industry Transistor Doping General Engineering General Physics and Astronomy 01 natural sciences Ferroelectricity law.invention law 0103 physical sciences Optoelectronics Field-effect transistor business Voltage Leakage (electronics) Negative impedance converter |
| Zdroj: | Japanese Journal of Applied Physics. 59:SGGA01 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/1347-4065/ab6420 |
| Popis: | In this work, we demonstrated that the 5-nm-thick HfAlO x negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec−1 subthreshold swing (SS), an ultralow I off of 7.44 fA μm−1, and a high I on /I off ratio of 1.9 × 108. The NC switching with sub-60 mV dec−1 SS can be implemented from V DS = 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlO x not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec−1 switching under a favorably low sub-1 voltage. This scaled HfAlO x NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. |
| Databáze: | OpenAIRE |
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