A3B5 nanowhiskers: MBE growth and properties

Autor:	Vladimir G. Dubrovskii, V. M. Ustinov, N. V. Sibirev, N. K. Polyakov, G. E. Cirlin, I. P. Soshnikov, A. A. Tonkikh, Yu. B. Samsonenko
Rok vydání:	2006
Předmět:	Fabrication Materials science Kinetic model business.industry General Physics and Astronomy Optoelectronics Nanotechnology Diffusion (business) Optimal growth business Aspect ratio (image) Molecular beam epitaxy
Zdroj:	Czechoslovak Journal of Physics. 56:13-20
ISSN:	1572-9486 0011-4626
DOI:	10.1007/s10582-006-0060-3
Popis:	The structural properties of GaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The maximum length of NWs is several times (up to 10) larger than the effective thickness of deposited GaAs. A kinetic model of the diffusion-induced NW rowth is used to predict the dependence of NW length on the technologically controlled MBE growth conditions. The obtained results demonstrate that the NW growth is controlled by the adatom diffusion towards their tip rather than by the conventional vapor-liquid-solid mechanism. The growth conditions influence on the NW morphology may be used for the controlled fabrication of NWs by MBE for different applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0a6787f4254736a0241e43d22a52d99 https://doi.org/10.1007/s10582-006-0060-3 Zobrazit plný text záznamu Full text from SpringerLink