Polyaminocarboxylate promoted synthesis of Hafnium/ Zirconium substituted anion excess In2O3: Structure, optical and electrical conductivity properties
| Autor: | Neetu Yadav, Shrishti Uniyal, Sitharaman Uma, Rajamani Nagarajan |
|---|---|
| Rok vydání: | 2022 |
| Předmět: |
Zirconium
Materials science Rietveld refinement Band gap Process Chemistry and Technology Oxide chemistry.chemical_element Bixbyite Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hafnium symbols.namesake chemistry.chemical_compound chemistry Electrical resistivity and conductivity Materials Chemistry Ceramics and Composites symbols Physical chemistry Raman spectroscopy |
| Zdroj: | Ceramics International. 48:6707-6715 |
| ISSN: | 0272-8842 |
| Popis: | The current study aimed to generate Hf/Zr substituted In2O3 with the ultimate aim of realizing a potential transparent conducting oxide. We applied a co-complexation method to bring the reactively dissimilar In and Hf/Zr together in one oxide network. We prepared an EDTA complex containing an equimolar concentration of In and Hf/Zr and examined their characteristics with FTIR and TG-DSC traces. Rietveld refinement results of calcined complexes and their Raman spectra confirmed the formation of anion excess bixbyite structure for (In1-xMx)2O3+δ (M = Hf, Zr, and x = 0.50). The lattice expanded after substituting with Hf/Zr, and the optical bandgap increased from 2.87 eV (In2O3) to 3.20–3.60 eV. The high percentage reflectance in the visible region and absorbance in the UV region fulfilled some of the prerequisites of transparent conducting oxide. Electrical resistivity reduced up to two orders in magnitude with increasing temperature for Hf and Zr incorporated In2O3. |
| Databáze: | OpenAIRE |
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