Traveling wave model of uni-traveling carrier photodiode

Autor: Senjuti Khanra, Abhirup Das Barman
Rok vydání: 2015
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.2192139
Popis: A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum mechanical principle. Output photocurrent response with time is found in close agreement with the experimental value.
Databáze: OpenAIRE