Low-via-resistance and low-cost PVD-TiZrN barrier for Cu/low-K interconnects

Autor:	Shau-Lin Shue, Yang Shin-Yi, Ching-Fu Yeh, Yu-Chen Chan, Chao-Hsien Peng, Lee Ming-Han
Rok vydání:	2016
Předmět:	010302 applied physics Interconnection Materials science 0103 physical sciences Electronic engineering Breakdown voltage 02 engineering and technology Wetting Composite material 021001 nanoscience & nanotechnology 0210 nano-technology 01 natural sciences
Zdroj:	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
DOI:	10.1109/iitc-amc.2016.7507722
Popis:	In this work, a low-resistance and low-cost PVD-TiZrN barrier is evaluated for BEOL interconnect. Comparing to conventional PVD barrier, comparable Cu barrier and Cu wetting properties are obtained. Moreover, up to 55% of via resistance reduction is achieved, with comparable voltage breakdown performance comparing to conventional one.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0922d35660d525c071c4abd5358fe72 https://doi.org/10.1109/iitc-amc.2016.7507722 Zobrazit plný text záznamu