Influence of Al doping on the magnetoresistance and transport properties of LaBaMnAlO (0 ≤ x ≤ 0.15) manganites
Autor: | Anchit Modi, Vikash Sharma, N. K. Gaur, Devendra K. Pandey, Padmini Pandey, G. S. Okram, Kumud Dubey |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Magnetoresistance Condensed matter physics Rietveld refinement Transition temperature 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Polaron 01 natural sciences Variable-range hopping Electronic Optical and Magnetic Materials Electrical resistivity and conductivity Seebeck coefficient 0103 physical sciences 0210 nano-technology |
Zdroj: | Journal of Magnetism and Magnetic Materials. 471:153-163 |
ISSN: | 0304-8853 |
DOI: | 10.1016/j.jmmm.2018.09.088 |
Popis: | This report presents the structural, magnetoresistance, electrical and thermal transport properties of Aluminium substituted La 0.7 Ba 0.3 Mn 1−x Al x O 3 (0 ≤ x ≤ 0.15) compounds synthesized by solid state reaction method. To obtain crystallographic parameters, the X-ray diffraction patterns are fitted in R-3c space group with Rietveld refinement method. The resistivity and magneto-transport measurements are performed using standard four-probe assembly with and without magnetic fields. The peak resistivity ρ peak is noted at Metal-Insulator Transition temperature ( T MI ) and lowering in T MI is observed for higher concentrations of Al 3+ . The resistivity data have been analyzed in two parts. Firstly, in the metallic region below T MI the resistivity data is fitted with three degree polynomial. Secondly, in the semiconducting region above T MI data have been fitted with Variable Range Hopping (VRH) and Small Polaron Hopping (SPH) models. The Seebeck coefficients found to be positive throughout the temperature range (10 K–300 K) with holes as dominating charge carriers. Similar to the resistivity profile, in metallic region the thermo-power is explained with qualitative model based on diffusion, magnon-drag, phonon-drag and spin fluctuation contributions whereas the semiconducting region is explained with small polaron hopping model. |
Databáze: | OpenAIRE |
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