Modelling of voltage changes in the n-p junction in the pulse mode

Autor:	M S Kovalenko, V S Volodin, A.V. Klenevsky, N M Bogatov, L R Grigoryan
Rok vydání:	2021
Předmět:	History Materials science business.industry Optoelectronics Pulse mode business Computer Science Applications Education Voltage
Zdroj:	Journal of Physics: Conference Series. 2094:022020
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/2094/2/022020
Popis:	The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of charge carriers in inhomogeneous semiconductors. The calculated time dependences of the voltage change in the SCR for a pulse voltage change on the n+-p-p+structure correspond to the experimental data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d0805f3c9997a3b538480d9192abfe25 https://doi.org/10.1088/1742-6596/2094/2/022020 Zobrazit plný text záznamu