Quaternary AlInGaN multiple quantum well 368nm light-emitting diode
| Autor: | Tsin Dong Lee, Hao-Chung Kuo, Jim Y. Chi, Te Chung Wang, Min Ying Tsai, Tien-Chang Lu, Zheng Hong Lee, Ching En Tsai, Chang Cheng Chuo |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Photoluminescence
Materials science business.industry Electroluminescence Condensed Matter Physics medicine.disease_cause Cladding (fiber optics) law.invention Inorganic Chemistry Optics law Materials Chemistry medicine Optoelectronics Junction temperature business Quantum well Ultraviolet Diode Light-emitting diode |
| Zdroj: | Journal of Crystal Growth. 287:582-585 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2005.10.141 |
| Popis: | We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal absorption, reduce electron overflow and enhance output power. The UV output power was as high as 1.52 mW at 20 mA at 368 nm under room temperature CW operation. The maximum output power in CW operation is 11 mW at 170 mA. In this letter, we demonstrate a helpful and easy way to measure and calculate the junction temperature of AlInGaN UVLEDs. |
| Databáze: | OpenAIRE |
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