Thin film encapsulation for quantum dot light-emitting diodes using a-SiNx:H/SiOxNy/hybrid SiOx barriers

Autor: Keun Yong Lim, Hong Hee Kim, Ji Hyun Noh, So Hyun Tak, Jae-Woong Yu, Won Kook Choi
Rok vydání: 2022
Předmět:
Zdroj: RSC Advances. 12:4113-4119
ISSN: 2046-2069
DOI: 10.1039/d1ra07712k
Popis: The extrapolated T50 at 100 cd m−2 for the a-SiNx:H/SiOxNy/hybrid SiOx (ASH)-encapsulated QD-LEDs is estimated to be 9804 h, which is compatible to that of 12112 h for glass lid encapsulated QD-LEDs.
Databáze: OpenAIRE