Current density profile characterization and analysis method for focused ion beam
| Autor: | Yariv Drezner, Yuval Greenzweig, Amir Raveh, Richard H. Livengood, Shida Tan |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Beam diameter Materials science Ion beam business.industry Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Focused ion beam Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics 0103 physical sciences M squared Laser beam quality Electrical and Electronic Engineering 0210 nano-technology business Scaling Current density Beam (structure) |
| Zdroj: | Microelectronic Engineering. 155:19-24 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2016.01.016 |
| Popis: | The most critical challenge of circuit edit is the scaling of nano-machined features to the ever-decreasing minimum dimensions of VLSI process technologies. A key enabler for achieving small nano-machined feature sizes is a narrow focused ion beam (FIB) profile. Thus, the analysis of FIB profiles and their characteristic widths yields useful criteria of suitability for advanced circuit edit and other nano-machining applications. We present herein, the details of an analysis method of ion beam profiles based on amorphization traces produced by the beam when scanned over a 001 Si single crystal sample, with increasing doses. The amorphized region widths are measured by high resolution transmission electron microscopy. The analysis, relying on TRIM simulation, yields the transverse current density of a beam as a sum of two Gaussians and an exponential, and includes error estimates. Successful beam analyses of several modern FIB columns have been performed. We believe that this methodological approach to beam profile analysis may be used to advantage by FIB column manufacturers for characterization and development. Display Omitted An analysis method suited for ion beam profiles of small probe size, is presented in detail.Amorphization traces in Si, are least-squares fitted to a TRIM derived damage function.A best parameterized beam profile is obtained assuming the form of two Gaussians and one exponential.A best parameterized beam profile is obtained assuming the form of two Gaussians and one exponential.Several relatively new FIBs have only (~ 5-10%) of beam current in tails, and are advantageous for nanomachining. |
| Databáze: | OpenAIRE |
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