Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method

Autor:	Y. Izwanizam, A. H. Afifah Maheran, F. Salehuddin, K. E. Kaharudin
Rok vydání:	2022
Zdroj:	1ST JOINT INTERNATIONAL CONFERENCE ON MATHEMATICS, STATISTICS AND ENGINEERING (J-CoMSE 2021): J-COMSE 2021 CONFERENCE PROCEEDING.
ISSN:	0094-243X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d06b2f80707940511a3f9c8c1681a6f1 https://doi.org/10.1063/5.0079065 Zobrazit plný text záznamu