Chemical Infiltration through Deep UV Photoresist
| Autor: | Marc Neyens, Philippe Garnier |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
chemistry.chemical_classification Materials science Nanotechnology 02 engineering and technology Polymer Integrated circuit Photoresist 021001 nanoscience & nanotechnology Condensed Matter Physics Infiltration (HVAC) 01 natural sciences Atomic and Molecular Physics and Optics law.invention chemistry Resist Gate oxide law 0103 physical sciences General Materials Science 0210 nano-technology Buffered oxide etch |
| Zdroj: | Solid State Phenomena. 255:117-121 |
| ISSN: | 1662-9779 |
| Popis: | Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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