SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit
| Autor: | Geoffrey Yeap, Joseph Wang, Seong-Ook Jung, Seung Chul Song, Younghwi Yang, Juhyun Park |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Circuits and Systems I: Regular Papers. 62:1538-1545 |
| ISSN: | 1558-0806 1549-8328 |
| Popis: | As the semiconductor technology scales down, the read stability and write ability of a static random-access memory (SRAM) cell are degraded because of the increased mismatch among its transistors. Extremely thin silicon-on-insulator is one of the attractive candidates to reduce this mismatch, and it offers an independent back-gate control using a thin buried oxide. The implementation of back-gate control has recently attracted much interest to improve the read stability and write ability. In this paper, we propose a selective cell current $(I_{\rm CELL})$ boosting scheme (SIB) and an asymmetric back-gate control write-assist (ABC-WA) circuit. SIB enhances the read performance by selectively boosting $I_{\rm CELL}$ of the SRAM cells. ABC-WA enhances the write ability by forward biasing the NMOSs at one side, which improves the write ability with reduction in the dynamic power overhead and without requiring a voltage generator. The proposed SRAM design improves the read performance and energy by 38.6% and 24.9%, respectively. |
| Databáze: | OpenAIRE |
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