STM observation of the atomic hydrogen adsorption on the Si(111)4 × 1-In surface
| Autor: | Osamu Kubo, Toshinori Numata, Mitsuhiro Katayama, Kenjiro Oura, A.A. Saranin, Itsuo Katayama |
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| Rok vydání: | 1997 |
| Předmět: |
Silicon
Hydrogen Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Alkali metal Surfaces Coatings and Films law.invention Crystallography chemistry Electron diffraction law Scanning tunneling microscope Indium Surface reconstruction |
| Zdroj: | Applied Surface Science. :354-359 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(96)00901-4 |
| Popis: | We have used scanning tunneling microscopy and low-energy electron diffraction to study early stages of atomic hydrogen interaction with Si(111)4 × 1-In surface at temperature 300°C. Indium rows of the 4 × 1-In structure were removed during interaction with atomic hydrogen and Si(111)4 × 1-H and Si(111)1 × 1-H coexisting regions were observed. This 4 × 1-H region was ascribed to the substrate reconstruction in accordance with the previous observations. Thus the substrate reconstruction for the Si(111)4 × 1-In was directly observed and evidenced. These results are interpreted on the basis of the recently proposed dimerized chain models for the Si(111)3 × 1 Ag and alkali metals reconstruction. |
| Databáze: | OpenAIRE |
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