Effect of precursor type and doping concentration on the physical properties of ultrasonically sprayed aluminium and indium co-doped zinc oxide thin films
| Autor: | Vinoth Kumar Jayaraman, Arturo Maldonado Álvarez, Yuri Koudriavtsev, María de la Luz Olvera Amador, Monserrat Bizarro |
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| Rok vydání: | 2017 |
| Předmět: |
inorganic chemicals
Materials science Aluminium chloride genetic structures Inorganic chemistry chemistry.chemical_element 02 engineering and technology Zinc 01 natural sciences Aluminium 0103 physical sciences Materials Chemistry medicine Thin film Wurtzite crystal structure 010302 applied physics Dopant Doping Metals and Alloys Surfaces and Interfaces respiratory system 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry 0210 nano-technology Indium medicine.drug |
| Zdroj: | Thin Solid Films. 642:14-19 |
| ISSN: | 0040-6090 |
| Popis: | In this work, we have studied the effect of aluminium dopant precursor type and doping concentration on the structural, morphological, optical and electrical properties of Al and In co-doped zinc oxide (AIZO) thin films deposited by ultrasonic spray pyrolysis. Zinc acetate dihydrate and indium acetate were used as zinc and indium precursors, respectively. Aluminium chloride and aluminium sulphate were used as aluminium precursors. The doping concentrations of Al (1 to 3 at%) and In (1 to 3 at%), were varied equally and the physical properties were analyzed. X-ray diffraction examinations confirmed that AIZO films were poly crystalline and grown as a hexagonal wurtzite structure. Scanning electron microscopy observations revealed that thin films were grown with different types of hexagonal nanostructures. From the optical and electrical measurements, the figure of merit was estimated. The values were 4.09 × 10− 3/Ω and 0.75 × 10− 3/Ω for the AIZO thin films deposited using aluminium chloride and aluminium sulphate respectively. |
| Databáze: | OpenAIRE |
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