DLTS studies of low-t emperature annealing in lithium-d oped silicon

Autor:	A. I. Rudenko, V. V. Zverev, Yu. V. Shcherbakov, N. V. Brilliantov
Rok vydání:	1992
Předmět:	Silicon Chemistry Annealing (metallurgy) Kinetics Analytical chemistry chemistry.chemical_element Irradiation Electron Radiation Condensed Matter Physics Recombination Electronic Optical and Magnetic Materials Nuclear chemistry
Zdroj:	Physica Status Solidi (a). 130:53-60
ISSN:	1521-396X 0031-8965
Popis:	DLTS studies of annealing kinetics are carried out for 1 MeV electron irradiated lithium-d oped silicon p-n solar cells. The results obtained show that during low-t emperature annealing Li atoms actively interact with radiation defects, transforming them into complexes with low recombination properties. New deep levels (Ec−0.36 eV) and (Ev0.30 eV), associated with lithium-c ontaining complexes are observed. A multistage annealing model for annealing of radiation defects is proposed. An explanation of the annealing kinetics as well as the identification of the new deep levels is given on the base of the model. [Russian text ignored]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d042384668128e9335c26b83b70664c9 https://doi.org/10.1002/pssa.2211300107 Zobrazit plný text záznamu Plný text