Origin of the temperature stability of dielectric constant in CaCu3Ti4O12
| Autor: | Yongsheng Liu, S. L. Tang, K. Bärner, X.J. Luo, Yi Wang, D.H. Xu, Changping Yang, Y.T. Zhang, Y. Chai, S.S. Chen |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Permittivity Materials science Condensed matter physics Process Chemistry and Technology 02 engineering and technology Dielectric Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Vacancy defect 0103 physical sciences Materials Chemistry Ceramics and Composites Dissipation factor Grain boundary Charge carrier Dielectric loss 0210 nano-technology |
| Zdroj: | Ceramics International. 45:12994-13003 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2019.03.229 |
| Popis: | The temperature and dc bias stability of the dielectric constant and loss tangent of CaCu3Ti4O12 samples sintered under different oxygen atmospheres are discussed. The results suggest that the metal-oxygen vacancy related defects not only provide the charge carriers for the conduction (defect doping) but also contribute to the huge permittivity in the way of defect dipoles repositioning under charge carrier hopping. The charge localization in a specific copper-oxygen vacancy defect complex is the reason of the huge and stable permittivity and low dielectric loss in the middle temperature range, 90 K-200 K (20 Hz), while the implementation of the large barrier layer height needs a contribution by the titanium oxygen vacancy related trap charges in the grain boundaries, which also lead to a second permittivity stable range in a higher temperature range 200 K–300 K. |
| Databáze: | OpenAIRE |
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