Electronic transport in semiconductors at high energy
| Autor: | Karl Hess, J. Bude, J.M. Higman |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Physics
Quantum Monte Carlo Monte Carlo method General Physics and Astronomy Monte Carlo method for photon transport Boltzmann equation Computational physics Condensed Matter::Materials Science Impact ionization Hardware and Architecture Dynamic Monte Carlo method Statistical physics Direct simulation Monte Carlo Monte Carlo molecular modeling |
| Zdroj: | Computer Physics Communications. 67:93-104 |
| ISSN: | 0010-4655 |
| Popis: | We briefly review the hot-electron effects which have necessitated the development of accurate solutions of the Boltzmann transport equation. The Monte Carlo particle method of simulating electronic transport in semiconductors is described, with emphasis on the importance of the bandstructure and scattering rates. Three active areas of research then reviewed: (1) simulation of femtosecond spectroscopy experiments, (2) precise calculation of the band-to-band impact ionization rates, and (3) calculation of the electron-phonon interaction based on pseudopotentials. With these three examples we indicate the direction Monte Carlo simulation of electronic transport in semiconductors is taking, i.e., the inclusion of more precise physics and the elimination of phenomenological, adjustable parameters. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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