Fabrication of dry etched and subsequently passivated laser facets in GaAs∕AlGaAs
| Autor: | Gerhard Franz, Eckard Deichsel |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Fabrication Passivation business.industry Nanotechnology Surfaces and Interfaces Plasma equipment and supplies Condensed Matter Physics Laser Surfaces Coatings and Films Semiconductor laser theory law.invention Gallium arsenide chemistry.chemical_compound chemistry Etching (microfabrication) law Optoelectronics business Diode |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2201-2205 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1786307 |
| Popis: | The aging behavior of edge emitting laser diodes based on GaAs∕AlGaAs is investigated by comparing devices with facets that are alternatively cleaved or dry etched and consecutively treated with H2S. In this work we demonstrate that an in situ exposure to H2S gas is not sufficient to prevent ageing but an additional plasma treatment is rather required to obtain comparable ageing results to lasers with cleaved facets. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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