Charge Carrier Transport in LEDs Based on Multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P Quantum Wells

Autor:	Vladimir L. Oleinik, P. V. Gorlachuk, V. N. Brudnyi, Yu. L. Ryaboshtan, А. А. Marmalyuk, I. A. Prudaev, I. S. Romanov
Rok vydání:	2014
Předmět:	Materials science Condensed matter physics Quantum heterostructure business.industry General Physics and Astronomy Heterojunction Double heterostructure law.invention law Optoelectronics Charge carrier business Quantum tunnelling Quantum well Light-emitting diode Solid solution
Zdroj:	Russian Physics Journal. 57:915-919
ISSN:	1573-9228 1064-8887
DOI:	10.1007/s11182-014-0324-5
Popis:	The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P quantum wells are presented. The experiment showed that increasing the number of quantum wells and decreasing the Al content in the Al x Ga1–x solid solution lead to an increase in the forward current at a fixed voltage. An analysis showed that the results obtained can be interpreted using the theory of diffusion charge transport in a double heterostructure with a narrow-bandgap layer, the thickness of which is many times larger than the thickness of a single quantum well. The proposed approach takes into account the carrier transport by tunneling through the barriers in an active region with multiple quantum wells.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d01eacf18dc9a1d29f37d2f264a11350 https://doi.org/10.1007/s11182-014-0324-5 Zobrazit plný text záznamu Plný text ve formátu PDF