Thin film BIMOS transistor for low-power spiking neuron design in 28nm FD-SOI CMOS technology
| Autor: | Philippe Galy, T. Bedecarrats, Claire Fenouillet-Beranger, Sorin Cristoloveanu |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Silicon
Computer science 020208 electrical & electronic engineering Transistor chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 020202 computer hardware & architecture law.invention Capacitor chemistry CMOS Neuromorphic engineering law Robustness (computer science) Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Thin film NMOS logic Hardware_LOGICDESIGN |
| Zdroj: | 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). |
| Popis: | Neuromorphic computing is an emerging field of investigation for new algorithm solutions and daily life applications. We investigate a novel design to achieve a spiking neuron operator which uses BIMOS transistor combined with a capacitor and a NMOS bias transistor. The devices are integrated on thin silicon film in 28 nm high-k/metal-gate standard CMOS technology. The proof of design is introduced through 3 dimensional technology computer-aided design (3D TCAD) numerical simulations, and then validated by electrical characterization of the 2T/1C demonstrator. High spiking performance with very low power consumption is obtained. In addition, the spiking neuron design benefits from intrinsic electro-static discharge (ESD) robustness. |
| Databáze: | OpenAIRE |
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