Direct Observation of Charge Storage in the Surface States of Silicon

Autor:	Owen L. Meyer, R. L. Raybold, George G. Harman
Rok vydání:	1963
Předmět:	Silicon Chemistry Capacitive sensing Electrode Density of states Analytical chemistry General Physics and Astronomy chemistry.chemical_element Graphite Atomic physics Surface states DC bias Envelope (waves)
Zdroj:	Journal of Applied Physics. 34:380-383
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1702616
Popis:	A new method of studying the surface states of silicon is described. Essentially it involves applying porous graphite contacts to p‐type silicon and exposing the samples to various inversion‐layer producing gaseous ambients. A voltage pulse is applied to the sample and the resulting current pulse is a measure of the density of charge states. From such data it was found that the number of water‐vapor‐induced surface states on p‐type silicon was 5×1012/cm2. For any sample this value was reduced ∼50% by using ammonia instead of water vapor. Tests using widely differing electrode particle sizes resulted in no change in the measured density of states. By applying a small dc bias (∼1 V at
Databáze:	OpenAIRE
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