Resonant states and THz lasing in SiGe quantum well structures δ-doped with boron

Autor:	M.S Kagan, I.N Yassievich
Rok vydání:	2002
Předmět:	Materials science Condensed matter physics Terahertz radiation Doping Resonant-tunneling diode Stimulated emission Condensed Matter Physics Population inversion Lasing threshold Acceptor Atomic and Molecular Physics and Optics Quantum well Electronic Optical and Magnetic Materials
Zdroj:	Physica E: Low-dimensional Systems and Nanostructures. 13:916-919
ISSN:	1386-9477
DOI:	10.1016/s1386-9477(02)00234-5
Popis:	An intense terahertz emission of stimulated character from boron-δ-doped Si/Si1−xGex/Si quantum well structures has been observed. The stimulated emission arises under strong electric fields (300– 1500 V / cm ) applied parallel to interfaces. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d00eb91000cee22c0c61cbbd9e1912ee https://doi.org/10.1016/s1386-9477(02)00234-5 Zobrazit plný text záznamu Full Text from ScienceDirect