Superconducting Single-Electron Transistor as a 3e-Cotunneling Turnstile
| Autor: | Sergey V. Lotkhov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Physics
Superconductivity Condensed matter physics Transistor Coulomb blockade Charge (physics) Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Signal 010305 fluids & plasmas law.invention Turnstile law 0103 physical sciences 010306 general physics Quantum tunnelling |
| Zdroj: | 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018). |
| DOI: | 10.1109/cpem.2018.8501230 |
| Popis: | In a superconducting single-electron transistor (SSET), we demonstrate a charge turnstile regime based on higher-order tunneling as a major transport mechanism. In this regime, the quantized current appears as a sequence of Cooper pair-electron cotunneling events cycled by a periodic gate signal and transferring a discrete three-electron charge per cycle. Operating as a relatively slow, higher-order tunneling system, the 3e-turnstile exhibits stable current plateaus in the sub-pA range. The device could be useful for generating precise ultralow currents as well as for experimental evaluation of cotunneling error rates in electron turnstiles. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|