Nonradiative-radiative recombination and trapping processes in the InGaAs/GaAs single quantum wells
| Autor: | Yufen Li, Jie Song, Shixiong Qian, Wen-Ji Peng, Zhenxin Yu |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Physics
Photoluminescence Condensed Matter::Other Exciton Trapping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science chemistry.chemical_compound chemistry Radiative transfer Spontaneous emission Atomic physics Excitation Quantum well Indium gallium arsenide |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | By using the time-resolved photoluminescence technique, we have studied the temporal properties of the photoluminescence from several InGaAs/GaAs single quantum well samples at 77 K. The radiative recombination, the nonradiative recombination and the trapping processes have been investigated for these samples. From the excitation power dependence and temperature dependence measurement, the radiative and the nonradiative lifetime of the carriers and the excitons in these quantum well samples have been obtained which reveal the great influence of the excitation power, temperature and the parameters of the well on these recombination processes.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: | OpenAIRE |
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