Device quality AlGaAs grown by chemical beam epitaxy
| Autor: | C.J. Miner, R.W. Streater, W.T. Moore, P. Mandeville |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Bipolar junction transistor Condensed Matter Physics Laser Chemical beam epitaxy Semiconductor laser theory law.invention Inorganic Chemistry law Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Thin film business Quantum well |
| Zdroj: | Journal of Crystal Growth. 164:485-490 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(96)00022-x |
| Popis: | Device quality AlGaAs layers have been grown by CBE using both TMAA and DMEAA on 3 inch diameter GaAs substrates. Al 0.3 Ga 0.7 As layers with oxygen concentrations as low as 1 x 10 16 cm -3 have been obtained for undoped layers using aluminum sources from different suppliers. Low oxygen levels (< 5 x 10 16 cm -3 ) have also been achieved for Sn- and carbon-doped AlGaAs. High power 980 nm InGaAs quantum well lasers have been prepared with efficiencies as high as 1.0 W/A and thresholds comparable to the best values obtained for MBE or MOCVD grown material. CBE grown heterojunction bipolar transistor structures have been processed into digital ICs that operate to speeds above 10 Gb/s. These devices show current gains of 50 to 80 for HBTs with base sheet resistances of 250 Ω/□. The low surface defect densities (< 10 cm -2 for defects larger than 0.5 μm) that are obtainable in the CBE process present a clear advantage for device manufacturing. A simple metalorganic cell design for the alanes is described that leads to reproducible and uniform alloy compositions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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