Electrical and mechanical properties of DLC coatings modified by plasma immersion ion implantation
| Autor: | S. M. Chiu, Chao-Hung Wang, Shih-Chin Lee, F. C. Tai, Dershin Gan, C. W. Chu |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Diamond-like carbon Silicon Mechanical Engineering Metals and Alloys Analytical chemistry chemistry.chemical_element Biasing Substrate (electronics) Dielectric Plasma-immersion ion implantation Ion chemistry Mechanics of Materials Plasma-enhanced chemical vapor deposition Materials Chemistry |
| Zdroj: | Journal of Alloys and Compounds. 449:379-383 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2006.02.108 |
| Popis: | DLC (a-C:H) films were deposited by the plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and then post-implanted by plasma immersion ion implantation (PIII) at different voltages and ion species (Ar, N 2 and C 2 H 2 ). Microstructure, dielectric constant and nano-hardness of the modified DLC films were studied. It is found that implanted C 2 H 2 ions can effectively increase the nano-hardness of DLC films from 13.5 to 25.3 GPa and reduce the dielectric constant to 2.5 in the bias voltage range of −35 to −40 kV. The improved properties are mainly associated with the increase in the ratio of sp 3 C C/sp 2 C C bonds and the reaction mechanisms in the implantation zone are discussed. |
| Databáze: | OpenAIRE |
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