A Study on the Breakdown Mechanism of an Electroless-Plated Ni(P) Diffusion Barrier for Cu/Sn/Cu 3D Interconnect Bonding Structures
| Autor: | Byunghoon Lee, Hoo-Jeong Lee, Seong-jae Jeon, Haseok Jeon, Kee-Won Kwon |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Diffusion barrier Solid-state physics Scanning electron microscope Diffusion Metallurgy Condensed Matter Physics Decomposition Electronic Optical and Magnetic Materials Barrier layer Crystallography Transmission electron microscopy Materials Chemistry Thermal stability Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 41:109-114 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-011-1759-x |
| Popis: | This study examined the thermal stability of an electroless-plated Ni(P) barrier layer inserted between Sn and Cu in the bonding structure of Cu/Sn/Cu for three-dimensional (3D) interconnect applications. A combination of transmission electron microscopy (TEM) and scanning electron microscopy allowed us to fully characterize the bonding morphology of the Cu/Ni(P)/Sn/Ni(P)/Cu joints bonded at various temperatures. The barrier suppressed Cu and Sn interdiffusion very effectively up to 300°C; however, an interfacial reaction between Ni(P) and Sn led to gradual decomposition into Ni3P and Ni3Sn4. Upon 350°C bonding, the interfacial reaction brought about complete disintegration of the barrier in local areas, which allowed unhindered interdiffusion between Cu and Sn. |
| Databáze: | OpenAIRE |
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