Structural characterisation of GaAlN/GaN HEMT heterostructures
| Autor: | M.-A. di Forte Poisson, M. Magis, N. Sarazin, O. Durand, J. Di Persio |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Scattering Resolution (electron density) General Physics and Astronomy Heterojunction Surfaces and Interfaces General Chemistry Surface finish High-electron-mobility transistor Condensed Matter Physics Surfaces Coatings and Films Optics Transmission electron microscopy Optoelectronics business Reflectometry Electronic density |
| Zdroj: | Applied Surface Science. 253:228-231 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2006.05.100 |
| Popis: | (GaN/GaAlN/GaN)//Al2O3(00.1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy. X-ray reflectometry has been used to determine with a high accuracy both the individual layer thicknesses and the interfacial roughness, in spite of the weak electronic density contrast between layers. From the Fourier inversion method and using a simulation software,theroughnessoftheinterfacecorrespondingtothetwo-dimensionalelectron gaslocationhasbeendeterminedequalto0.5 nm.Bothhigh resolution X-ray diffraction and transmission electron microscopy experiments have shown the excellent crystallinity of the heterostructures. Finally, the surface morphology has been inferred using atomic force microscopy experiments. # 2006 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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