AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
| Autor: | U.K. Mishra, C.S. Chou, Lawrence E. Larson, M.A. Melendes, M. Thompson, S.E. Rosenbaum, C.E. Hooper, M.J. Delaney, April S. Brown |
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| Rok vydání: | 1989 |
| Předmět: |
Materials science
business.industry Electrical engineering Conductance High-electron-mobility transistor Epitaxy Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Molecular beam epitaxial growth Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | IEEE Electron Device Letters. 10:565-567 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.43141 |
| Popis: | Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150 degrees C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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