Surface analysis of 6HSiC
Autor: | V. van Elsbergen, W. Mönch, T. U. Kampen |
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Rok vydání: | 1996 |
Předmět: |
Auger electron spectroscopy
Chemistry Annealing (metallurgy) Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound X-ray photoelectron spectroscopy Electron diffraction Chemical bond Materials Chemistry Silicon carbide Chemical composition Surface reconstruction |
Zdroj: | Surface Science. 365:443-452 |
ISSN: | 0039-6028 |
DOI: | 10.1016/0039-6028(96)00707-8 |
Popis: | The composition of {0001} surfaces of 6HSiC samples was studied by using low-energy electron diffraction, Auger electron (AES), and X-ray photoelectron spectroscopy (XPS/SXPS). The samples were cleaned in ultrahigh vacuum by heating them either in the presence of a Si flux at different temperatures or by annealing at 1170 K for 10 min. Depending on the preparation method and temperature used four reconstructions were observed: (1 × 1), (3 × 3), (√3 × √3)R30°, and (6√3 × 6√3)R30°. The compositions of the reconstructions and the chemical bonding of the surface atoms were characterized using AES and XPS/SXPS. Models for the reconstructions are proposed. |
Databáze: | OpenAIRE |
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