Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide
| Autor: | A. V. Osipov, S. A. Kukushkin, Yu. E. Kitaev |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors chemistry.chemical_element Crystal structure engineering.material 01 natural sciences Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake 0103 physical sciences Silicon carbide Diamond cubic 010306 general physics 010302 applied physics Condensed matter physics Nanocrystalline silicon Diamond Condensed Matter Physics Electronic Optical and Magnetic Materials Brillouin zone chemistry engineering symbols Condensed Matter::Strongly Correlated Electrons Raman spectroscopy |
| Zdroj: | Physics of the Solid State. 59:28-33 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s1063783417010164 |
| Popis: | A symmetry analysis of the crystal structure and the phonon spectrum during continuous topochemical conversion of silicon into silicon carbide has been carried out. The transformation of the symmetry of phonons at high-symmetry points of the Brillouin zone upon the transition from the initial cubic structure of silicon (diamond) through an intermediate cubic structure of silicon carbide to the trigonal structure of SiC has been determined. The selection rules for the infrared and Raman spectra of all the three phases under investigation have been established. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink