Deposition of HfO2 and ZrO2 films by liquid injection MOCVD using new monomeric alkoxide precursors

Autor:	Paul R. Chalker, Stephen Taylor, Helen C. Aspinall, Anthony C. Jones, Jamie F. Bickley, Richard J. Potter, Ruairi O'Kane, Lesley M. Smith, Yim Fun Loo
Rok vydání:	2005
Předmět:	Auger electron spectroscopy Materials science Oxide Mineralogy General Chemistry Crystal structure Substrate (electronics) chemistry.chemical_compound chemistry Alkoxide Materials Chemistry Physical chemistry Metalorganic vapour phase epitaxy Thin film Monoclinic crystal system
Zdroj:	Journal of Materials Chemistry. 15:1896
ISSN:	1364-5501 0959-9428
DOI:	10.1039/b417389a
Popis:	Thin films of ZrO2 and HfO2 have been deposited by liquid injection MOCVD using the new alkoxide precursors [Zr(OBut)2(dmop)2] (1) and [Hf(OBut)2(dmop)2] (2) [dmop = 2-(4,4-dimethyloxazolinyl)-propanolate]. The crystal structures of 1 and 2 have been determined, and they are shown to be six-coordinate monomeric complexes. They are volatile, and are significantly less reactive to air and moisture than existing Zr and Hf alkoxide precursors such as [Zr(OBut)4] and [Hf(OBut)4]. The ZrO2 and HfO2 thin films were deposited over substrate temperatures ranging from 350–550 °C. Analysis by X-ray diffraction shows that the films were deposited in the thermodynamically stable α- or monoclinic phase, and Auger electron spectroscopy shows that the ZrO2 and HfO2 films are non-stoichiometric and that carbon (1.9–8 at%) was present in the oxide films.
Databáze:	OpenAIRE
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