| Autor: |
H Vonk, R.T.H. Rongen, M.R. Leys, Frans D. Tichelaar, T. Marschner, JH Joachim Wolter |
| Rok vydání: |
1997 |
| Předmět: |
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| Zdroj: |
Journal of Crystal Growth. :1081-1086 |
| ISSN: |
0022-0248 |
| Popis: |
GaInAs InP multiple quantum well (MQW) layers with high tensile strain in the GaInAs layers have been grown by chemical beam epitaxy (CBE). The samples were analysed by high-resolution X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM). The influence on layer properties of the tensile strain and the substrate off-orientation of the (100) InP substrates is investigated. XRD studies reveal that the growth rate of GaInAs as well as that of InP is larger for off-oriented substrates than for exactly oriented substrates. This behaviour is independent of the strain in the GaInAs layers and of the growth temperature in the chosen range between 485°C and 545°C. We attribute the observed changes of the growth rate to the different growth modes on exact (100) and off-oriented substrates. MQW structures grown on off-oriented substrates show a linear increase of the PL line width of the GaInAs MQW peak with increasing tensile strain in the GaInAs layers. In contrast, it stays constant for exactly oriented substrates. This increase in the PL line width for off-oriented substrates is explained by the lattice tilting occurring when strained layers are deposited on stepped surfaces. The tilt angle is proportional to the amount of incorporated elastic strain as shown by the azimuthal dependence of the position of the zeroth-order satellite reflection in XRD. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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