Modelling and Characterization of BBr3 Boron Diffusion Process for n-Type Si Wafer Solar Cells
| Autor: | Li, M., Hoex, B., Ma, F.-J., Devappa Shetty, K., Aberle, A.G., Samudra, G.S. |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20152015-2bv.8.4 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 808-812 The non-uniformity of the BSG (borosilicate glass) layer formed during BBr3 tube diffusion is one of the major concerns for solar cell fabrication, as the BSG layer serves as the dopant source and thus determines the amount of boron dopants that are available. It is beneficial to have a deep understanding on the correlation between the properties of the BSG layer and the resulting doping profile. Process simulations on tube diffusion are of great relevance for the optimisation of industrial n-type solar cells. However, the simulation models and parameters were mostly calibrated for CMOS (Complementary Metal Oxide Semiconductor) device fabrication. In this work, we present an investigation on the influence of BSG non-uniformity on the resulting doping profiles. We demonstrate with both experiments and by simulations that the doping profiles are not strongly affected by the non-uniformity of the BSG layer once the BSG thickness is beyond a threshold. We present a set of model and parameters that is suitable for accurately predictive simulation for solar cell fabrication. In addition, the sensitivity of the key modelling parameters is discussed and reported. |
| Databáze: | OpenAIRE |
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