Formation of radiation defects in zinc-doped silicon solar cells

Autor:	N. A. Tursunov, M. N. Erdonov, Sh. Makhkamov, A. R. Sattiev, R. A. Muminov, Kh. M. Kholmedov, M. Karimov, K. P. Abdurakhmanov
Rok vydání:	2013
Předmět:	Materials science integumentary system Silicon Renewable Energy Sustainability and the Environment business.industry Doping chemistry.chemical_element Zinc Photoelectric effect Radiation Ionizing radiation Spectral sensitivity chemistry Optoelectronics Degradation (geology) business
Zdroj:	Applied Solar Energy. 49:185-191
ISSN:	1934-9424 0003-701X
Popis:	The influence of y-radiation on the photoelectric characteristics of solar cells (SCs) made of zincdoped silicon has been studied. It has been proved that the degradation degree of SC photoelectric characteristics depended on the concentration of zinc in the silicon. An increase in the zinc concentration within p-Si〈Zn〉 enhances the resistance of the photoelectric characteristics of SCs to ionizing radiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cfb2f0a1772a4e360c8fcaa12afac365 https://doi.org/10.3103/s0003701x13040117 Zobrazit plný text záznamu Full text from SpringerLink