A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices

Autor:	R. Kosik, Tibor Grasser, Hans Kosina, Bernd Meinerzhagen, Christoph Jungemann, Siegfried Selberherr
Rok vydání:	2004
Předmět:	Physics symbols.namesake Modeling and Simulation Lattice (order) Boltzmann constant symbols Semiconductor device Statistical physics Electrical and Electronic Engineering Device simulation Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Computational Electronics. 3:183-187
ISSN:	1572-8137 1569-8025
DOI:	10.1007/s10825-004-7041-1
Popis:	Macroscopic transport models derived from Boltzmann’s equation by using the method of moments are often used to efficiently evaluate the electrical behavior of semiconductor devices. The most commonly used model is the drift-diffusion model which comprises the first two moments of Boltzmann’s equation. In this model the carrier gas is assumed to be in equilibrium with the lattice, an assumption severely violated in submicron semiconductor devices. Hydrodynamic and energy-transport models have therefore been proposed to overcome this limitation. However, these extended models have never been widely accepted as a viable substitute, because for small devices they often do not deliver the expected improved accuracy. Here we present a non-parabolic six moments model which predicts considerably more accurate currents than the energy-transport model down to gate-lengths as small as 40 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cf98e2d2845174054ad02631a0dd2f6f https://doi.org/10.1007/s10825-004-7041-1 Zobrazit plný text záznamu Full text from SpringerLink