Stacked 2D nanoflake-structured thin films of chalcogenide SnSxSe(y−x) grown by spray pyrolysis: structural, optical and electrical properties
Autor: | I. A. Garduño-Wilches, J. S. Narro-Rios, A. Sanchez-Juarez, M. A. Aguilar-Frutis |
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Rok vydání: | 2020 |
Předmět: |
010302 applied physics
Materials science Band gap Chalcogenide Analytical chemistry Conductivity Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Phase (matter) Seebeck coefficient 0103 physical sciences Transmittance Deposition (phase transition) Electrical and Electronic Engineering Thin film |
Zdroj: | Journal of Materials Science: Materials in Electronics. 31:10930-10938 |
ISSN: | 1573-482X 0957-4522 |
Popis: | In the present work, ternary SnSxSe(2−x) structures were synthesized as thin films by the spray pyrolysis technique. Structural, electrical and optical properties were studied as a function of the deposition temperature. XRD and EDS results showed the presence of the SnSxSe(2−x) phase in the films deposited at temperatures from 300 to 400 °C. The phase SnSSe was obtained at 400 °C and at higher deposition temperatures a mixture of the SnSxSe(2−x) and SnSxSe(1−x) phases becomes present in the samples. XRD also indicated a preferential growth along the (001) direction, and this result is corroborated with SEM images where nanometric flakes with the hexagonal form corresponding to the SnSxSe(2−x) phase were observed. An n-type conductivity was obtained by both Hall-Van der Pauw and Seebeck measurements in the films deposited from 300 to 400 °C. For films deposited at temperatures above 400 °C, a p-type conductivity was obtained in some samples. A Seebeck coefficient as high as 603 μV/K was obtained for the sample deposited at 400 °C. Bandgap energies were obtained from the transmittance and reflectance spectra. The bandgap varied from 2.44 to 1.04 eV, yielding a value of 1.28 eV for the SnSSe sample. |
Databáze: | OpenAIRE |
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