Adherent HFCVD diamond on steels substrates using vanadium carbide intermediate layer
| Autor: | Evaldo José Corat, Danilo Maciel Barquete, Andre Contin, M. C. C. B. Gomes, Vladimir Jesus Trava-Airoldi, Djoille Denner Damm |
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| Rok vydání: | 2018 |
| Předmět: |
Vanadium carbide
Materials science Scanning electron microscope 02 engineering and technology Chemical vapor deposition engineering.material 01 natural sciences chemistry.chemical_compound symbols.namesake Coating 0103 physical sciences Materials Chemistry Deposition (phase transition) Electrical and Electronic Engineering Composite material 010302 applied physics Mechanical Engineering Diamond General Chemistry 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Microcrystalline chemistry engineering symbols 0210 nano-technology Raman spectroscopy |
| Zdroj: | Diamond and Related Materials. 89:218-226 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2018.09.013 |
| Popis: | Investigations on CVD diamond deposition on steels for high performance tools development persisted over years. Literature makes out the need for an intermediate layer to improve adhesion and film quality. This work studied Thermo Diffused Vanadium Carbide (TDVC) coating deposited on AISI O1 steel by thermo reactive diffusion (TRD). Thick TDVC layers formed by varying the thermo diffusion time from 1 h to 12 h. Hot Filament Chemical Vapor Deposition reactor (HFCVD) growth conditions variation made possible diverse diamond films growth, from ultrananocrystalline to microcrystalline. X-ray diffraction, scanning electron microscopy with a field emission gun (FEG-SEM) and Raman spectroscopy were the characterization techniques used. The TDVC coating showed up as an excellent diffusional barrier and, also, a compressive stress reliever. The thicker high quality and adherent HFCVD diamond film grown over the TDVC had a thickness of 3 μm. A TDVC cross-section of 35 μm thickness could effectively mitigate diamond residual thermal compressive stress state after cooling. |
| Databáze: | OpenAIRE |
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